Selective ionic implantation of fluoropolymer film to modify the sensitivity of underlying sensing capacitors

ABSTRACT

A touch-sensitive semiconductor chip having a physical interface to the environment, where the surface of the physical interface is coated with a fluorocarbon polymer. The polymer is highly scratch resistant and has a characteristic low dielectric constant for providing a low attenuation to electric fields. The polymer can be used instead of conventional passivation layers, thereby allowing a thin, low dielectric constant layer between the object touching the physical interface, and the capacitive sensing circuits underlying the polymer.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This U.S. patent application is related to U.S. patentapplications filed herewith, and identified as Attorney Docket Numbers01-C-041 and 01-C-043.

TECHNICAL FIELD OF THE INVENTION

[0002] The present invention relates in general to semiconductor devicesand processing methods, and more particularly to the use of an organicpolymer protective coating on semiconductor chips having surfacesexposed to the environment.

BACKGROUND OF THE INVENTION

[0003] Integrated circuits are employed in many different environmentswhich require protection against mechanical damage, chemicaldeterioration, electromagnetic and electrostatic invasion, and a host ofother agents. Conventional integrated circuits are fabricated on wafers,each of which consists primarily of a monocrystalline silicon substrate.Upon completion of the fabrication process, the wafer is sliced intoseparate square or rectangular chips, each including a completeintegrated circuit, which is then encapsulated to form a finisheddevice.

[0004] The manner in which an integrated circuit is fabricated andpackaged determines in a large part how well the chip is protected fromthe foregoing environmental effects. The outer package of an integratedchip is intended to provide mechanical protection, and to a certaindegree moisture protection. The integrated chip itself is fabricatedwith various passivation layers to provide intimate protection fromnumerous environmental attacks, including ion diffusion (sodium ionsespecially) into the active circuitry of the semiconductor chip. Anindustry standard for passivation of a semiconductor chip is to depositan inorganic silicon nitride material over the surface of the chip. Thispassivation material provides an excellent barrier and protects theactive circuitry from the adverse effects of moisture, sodium and othersimilar ions.

[0005] Integrated circuits have traditionally been packaged with aplastic, ceramic or other type of encapsulating material to providemechanical and moisture protection to the chip. The pins or contact padsof the packaged chip are accessible to provide electrical access to thecircuits of the chip. This is a common packaging technique, as the onlyaccess required to the chip is by way of electrical signals.

[0006] A new generation of integrated circuit chips has evolved where amechanical or physical input to the chip is necessary. One such type ofintegrated circuit is used in the biometric field where a physicalinput, such as a finger touch to the chip, is used so that correspondingsignals can be processed by the chip to produce an output related to thetouch. In one family of integrated chips, a surface or physicalinterface of the chip is not encased or encapsulated in the conventionalmanner, but rather is accessible for touching by a fingertip so theimage of a fingerprint can be electrically generated by the circuits ofthe chip. An array of sensing capacitors is fabricated near the exposedsurface of the chip to sense the ridges and valleys of the fingerprint.Such type of integrated circuit is disclosed in U.S. Pat. No. 6,114,862by Tartagni, et. al., assigned to the assignee hereof. Other sensingtechniques are available in integrated circuits for reproducing aperson's fingerprint when the integrated circuit is touched.

[0007] When a physical interface is necessary between the integratedcircuit chip and the environment, special precautions must be taken, asthe use of conventional encapsulation is often not an option. Thephysical interface must not interfere with the interaction between theenvironment and the chip, whether it be the texture of an object such asa fingerprint, the temperature of the article physically contacting thechip interface, optical inputs, etc. When an integrated circuit chip isprovided with a physical interface exposed to the environment, there isalways a concern that such an interface is sufficiently rugged, but yetalso sufficiently protective to the underlying circuits. Conventionally,the physical interface to biometric fingerprint sensors involves the useof a very thin silicon carbide layer covering a silicon nitridepassivation layer. Silicon carbide is well known for its durability, inthat it is an extremely hard material. When used with capacitor-typefingerprint sensors, the thickness of the passivation layer and thephysical protective layer should be relatively thin so as not tocompromise the sensitivity of the sensing circuits to the differences inthe physical properties that exist between the ridges (flesh) andvalleys (air gaps) of the fingerprint. It has been found that when athin silicon carbide layer is used for the physical interface, it isvery durable and highly wear resistant, but can nevertheless crack orbreak when subjected to concentrated loads. Although the silicon carbidematerial provides an extremely hard physical interface, the brittlecharacteristic of such material is a disadvantage, especially when it issubjected to impact forces produced by sharp or pointed objects.

[0008]FIG. 1 illustrates the material layers of a conventionalsemiconductor chip of the type that has a physical interface to theenvironment. In this type of integrated circuit, a metal layer 10forming a network is deposited on an intermediate layer, and patterned,so as to form a matrix of fringing capacitors to sense the ridges andvalleys of a fingerprint. The principle of operation of such type ofintegrated circuit is set forth in more detail in U.S. Pat. No.6,114,862, noted above. The basic structure includes two side-by-sidecapacitor plates at each sensor cell or pixel of an array of suchpixels. The skin surface of the user's finger, when pressed against thesensing surface or physical interface, forms a common capacitor platewith the side-by-side plates at each pixel and effectively modulates thefringing capacitance between the plates. The change in the fringingcapacitance is sensed to determine the presence of a fingerprint ridgeor valley at the particular pixel location. A plurality of pixelsarranged in a matrix thus provide a complete image of the fingerprint.

[0009] In the construction of a fringing capacitor, touch-sensitivechip, a dielectric layer 12 is deposited over the silicon wafer orsubstrate 14. An interconnect metal 16 is deposited over the dielectriclayer 12 and patterned to provide interconnections between circuitsformed in the silicon material of the substrate 14. At this point, thedevice structure is planarized by depositing a material 18 over thepatterned metal 16 and planarizing the material 18. One or moreintermediate layers 20 and 22 may be formed over the planarized surfaceof the device. The metal network 10 forming the plates of the fringingcapacitors is formed on the intermediate layers 20 and 22, and againplanarized using a material 24, such as a conventional FOX spin-onglass, or other suitable material.

[0010] In order to provide a mechanical and chemical protective coatingover the surface of the touch-sensitive portion of the chip, it is aconventional practice to form one or more passivation layers of a hardand chemically resistant material, such as silicon nitride 26 and/orsilicon carbide 28. In many instances, even when a silicon carbidepassivation layer is employed, an underlying silicon nitride layer isalso used, as it is well accepted in the industry for its excellentpassivation properties. In other words, when the passivation of a newchip constitutes at least some silicon nitride, the chips are morereadily accepted and qualified according to conventional semiconductorprocessing standards. Semiconductor industry standards recognize thatsilicon nitride is excellent in providing a barrier to ionic diffusionand moisture ingestion. While these passivation materials are wellsuited for standard semiconductor chips, such materials have many of theshortcomings noted above.

[0011] The selection of a passivation material for a semiconductor chipthat requires an environmental interface is important, insofar as thedielectric constant is concerned. This is especially the case whentouch-sensitive chips are concerned. In this type of chip, perturbationsin the capacitive electric field are sensed to determine the contour ofthe object touching the physical interface of the chip. The electricfield between the object touching the chip and the underlaying fringingcapacitor network is a function of the dielectric constant of thematerial layers therebetween. As a result, it has been found thatpassivation layers are better suited for touch-sensitive chips, whensuch layer(s) have a relatively low dielectric constant. It is wellknown that the inorganic silicon-based passivation materials, such assilicon nitride, have a relatively high dielectric constant in the rangeof about 8-9. Silicon carbide has a dielectric constant of about 9.7.Other dielectric materials, such as the organic family of the polyimidematerials, have a relative high dielectric constant in the range ofabout 3-8.

[0012] An important consideration in the design of a physical interfacefor touch-sensitive chips, is that of “ghosting”. The properties of thematerial selected for the physical interface may exacerbate ghosting,where the oils and/or water of previous finger prints remain after thefinger is removed. These residues can produce a latent image to the chipeven when there is no finger present. This creates problems withsecurity equipment and may interfere with the correct recognition of acurrent finger print image.

[0013] In selecting the type of material for use as a passivation layerfor touch-sensitive chips, the thickness of the passivation layer(s) isalso a consideration. While thick layers provide a better barrier tochemical invasion and mechanical shock, the sensitivity of thecapacitive reaction between the object and the fringing capacitivenetwork is reduced when the passivation layer is thicker. Hence, foroptimum performance of a touch-sensitive, fringing capacitive chip, thepassivation layer should be highly rugged and resistant to impact shockand scratches, provide a barrier to chemical invasion, be hydrophobicand oleophobic, have a relatively low dielectric constant, and be ableto be deposited on the chip surface as a thin layer.

[0014] An organic fluoropolymer has recently been developed for use withsemiconductor chips. The polymer is disclosed in U.S. Pat. Nos.4,977,297 and 4,982,056 by Squire, and issued to E. I. du Pont deNemours and Company (“DuPont”). This material has a low dielectricconstant of about 2.1, making it well adapted for use with electricaland electronic applications, such as between circuit layers inmulti-layer circuit boards. In the Squire patents, the polymer is alsoindicated as being useful for coating and encapsulating electroniccircuits using a solution coating process.

[0015] A Teflon® amorphous fluoropolymer (Teflon AF) is available foruse with semiconductor circuits. The Teflon AF has a dielectric constantof 1.89-1.93, and thus makes it a good candidate for use as passivationlayers and for encapsulation of hybrid/sandwich integrated circuitpackaging. The Teflon AF material can be applied in thin coatings, tothe micron level. Teflon® is DuPont's registered trademark forfluorinated ethylene propylene, and is used in connection with a varietyof low-friction, highly durable products.

[0016] It can be seen from the foregoing that a need exists for aphysical interface on integrated circuits, where the physical interfaceis rugged, durable and less susceptible to breakage when subjected topoint contact loading, and the like. Another need exists for a singlethin physical layer on integrated circuits that can replace thetraditional silicon nitride and silicon carbide layers, therebyincreasing the sensitivity of the sensing circuits. Yet another needexists for an organic passivation layer that is rugged but somewhatcompliant, thereby reducing the tendency of the physical interface tobreak or crack. A need exists for a physical interface to an integratedchip, where the physical interface reduces latency effects andhypersensitivity to moisture, oils, etc.

SUMMARY OF THE INVENTION

[0017] The present invention disclosed and claimed herein, in one aspectthereof, comprises a method of passivating an integrated circuit of thetype having a physical interface to the environment. In accordance withthe principles and concepts of the invention, the method includes thestep of depositing a fluorocarbon polymer as an outer layer of thephysical interface. This type of physical interface can be applied tothe integrated chip as a thin layer that is tough, compliant, andexhibits a low coefficient of friction so that it is resistant toabrasion, scratches and other forms of mechanical damage. The lowdielectric constant characteristics of the fluorocarbon polymer make itwell adapted for use in fringing capacitive type biometric sensors.

[0018] When a fluorocarbon polymer is used as the physical interface toa touch-sensitive chip, the latency of the residual image (once thefinger is removed) is substantially reduced.

[0019] In another form of the invention, the fluorocarbon polymer can bedeposited on the outer surface of the integrated circuit as apassivation layer, in lieu of the conventional silicon nitride andsilicon carbide passivation layers. For ease of operation, thefluorocarbon polymer can be applied by spray techniques over the activecircuits of the semiconductor device, in the window area of theencapsulation to provide the physical interface to the environment.

[0020] In another aspect of the invention, the conventional planarizingand overlying passivation layers of an integrated circuit can bereplaced with an organic layer of fluorocarbon polymer which can beplanarized, and which also functions as a passivation layer for thechip. In addition, a gettering agent can be implanted in thefluorocarbon polymer material to immobilize deleterious ions, suchsodium ions.

[0021] In yet another aspect of the invention, particles can beimplanted into the surface of the fluorocarbon polymer to producevariations in the electrostatic field generated by the fringingcapacitors of a touch-sensitive integrated circuit. Based on the type ofparticles, the concentration, and the location thereof, such particlescan influence the shape and intensity of the electric field in a desiredmanner.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Further features and advantages will become apparent from thefollowing and more particular description of the preferred and otherembodiments of the invention, as illustrated in the accompanyingdrawings in which like reference characters generally refer to the sameparts, elements or functions throughout the views, and in which:

[0023]FIG. 1 is a cross-sectional view of a touch-sensitivesemiconductor chip illustrating the conventional layers of passivation;

[0024]FIG. 2 is a cross-sectional view of a portion of a touch-sensitivesemiconductor wafer showing the use of an organic polymer for thephysical interface of the chip;

[0025]FIG. 3 is a top view of a portion of the chip shown in FIG. 2;

[0026]FIG. 4 is a top view of an embodiment of a touch-sensitiveintegrated circuit with a physical interface;

[0027]FIG. 5 illustrates a cross-sectional view of a touch-sensitivechip constructed in accordance with another embodiment of the invention,where standard planarizing and passivation material layers have beenreplaced by an organic polymer layer;

[0028]FIG. 6 is a cross-sectional view of the wafer of FIG. 5, but witha gettering agent disposed in the surface of the polymer physicalinterface;

[0029]FIG. 7 illustrates a cross-sectional view of a portion of anintegrated circuit provided with a polymer layer covering conventionalpassivation layers, where the polymer layer has embedded thereinparticles for influencing the electric field;

[0030]FIG. 8 illustrates a cross-sectional view similar to that of FIG.5, but with an example of the shape of an electric field;

[0031]FIG. 9 illustrates the integrated circuit of FIG. 8 with particlesembedded in the polymer layer, and the resultant shape of the electricfield;

[0032]FIGS. 10a and 10 b are enlarged photograph images that illustraterespectively the sensitivity of a moist and dry finger as applied to thephysical interface of a touch-sensitive chip;

[0033] and FIGS. 11a and 11 b are enlarged photograph images thatillustrate respectively the latency of a fingerprint on a prior artphysical interface, and a physical interface that is constructed using afluorocarbon polymer.

DETAILED DESCRIPTION OF THE INVENTION

[0034] The preferred and other embodiments of the invention aredescribed below. However, it is to be understood that the principles andconcepts of the invention can be used in many other applications, andare not limited to touch-sensitive devices where a physical stimulussuch as a finger touch, is input thereto. While the features of theinvention are described in connection with a touch-sensitive integratedcircuit, such features can be employed with many other integratedcircuits, including chips where the physical input to the chip includesa sliding or wiping touch to the physical interface. In the latter typeof touch-sensitive chip, the underlying circuits employ a scanningtechnique to rasterize the image of the object moved across the physicalinterface. In the description that ensues, the drawings do notillustrate the devices to scale, especially the thickness of the variousmaterial layers.

[0035] With reference to FIG. 2, there is shown an embodiment of theinvention where the physical interface 30 is exposed to the environmentso that a physical stimulus can be input to the chip. As noted above,when this situation is encountered, the physical interface 30 must beresistant to chemicals and be durable so as not to be damaged by objectsscratching or striking the surface of the physical interface 30. In theformation of an integrated circuit on a substrate 14 providing aphysical interface 30, it is realized that the other portions of thedevice may be encapsulated with a plastic, ceramic, or other suitableencapsulation material.

[0036] It has been found that an ideal material with which the physicalinterface can be formed is a fluorocarbon polymer 32. One polymer 32that is believed to be well adapted for use in connection with theinvention, and as described below, is informally identified as Teflon®AF amorphous fluoropolymers, as described in detail in U.S. Pat. Nos.4,977,297 and 4,982,056, both by Squire. The disclosures of such patentsare incorporated herein by reference. This type of polymer lends itselfwell to use in semiconductor fabrication processes, especially as aspin-on material, is mechanically durable and is resistant to manychemicals.

[0037] The touch-sensitive integrated circuit of FIG. 2 has a physicalinterface 30 with a fluorocarbon polymer 32 providing the thin film as aprotective cover thereto. The polymer film 32 provides environmentalprotection to the underlying metal pattern 10 forming the fringingcapacitors. Each fringing capacitor defines a pixel which produces anelectric field that is affected by the dielectric properties of theobject touching the physical interface. The dielectric constant of humanflesh is in the range of about 30 to 80, and the dielectric constant ofair is unity. The circuits of the sensor chip differentiate thedifference in the dielectric constants of the fingerprint, which is theridge flesh, and the fingerprint gap, which is air. The sensing circuitsconnected to the capacitor metal pattern 10 which detect changes in theelectric field can be of the type disclosed in U.S. Pat. No. 6,114,862by Tartagni et al. It is understood that many fringing capacitors andcorresponding metal patterns are formed near the surface of thesemiconductor chip, such as shown in FIG. 3.

[0038] In practice, in the touch-sensitive integrated circuit shown inFIG. 4, the area of the physical interface 30 may be about 12.8 mm by18.0 mm (0.504 inch by 0.708 inch). With this arrangement, the physicalinterface 30 is sufficiently large to accommodate the touching thereofby a fingertip. The ridges and valleys of the fingerprint are sensed bythe matrix of fringing capacitors so that the fingerprint can becharacterized in digital form as an image, and easily compared by aprocessing system with a reference print(s). To that end, the thin filmpolymer 32 has a low dielectric constant of about 2.0, or less, thusenabling the fingerprint to be electrically coupled to the sensingcapacitors with a low attenuation. The polymer film 32 is compliant, andnot brittle like silicon carbide and silicon nitride, thereby providinga mechanically durable material that resists scratching, cracking orbreaking when sharp or pointed objects are caused to contact or strikethe polymer film 32. The compliant nature of the polymer film 32 allowssurface loads, such as those caused by particles of objects, to beredistributed over a larger area, thus reducing the stress intensity onthe underlying circuit structure.

[0039] The fluorocarbon polymer film 32 can be of different types ofpolymers, and applied over the surface of the physical interface 30 byvarious means. For example, the fluorocarbon polymer 32 can be appliedby standard semiconductor processing spin-on techniques, using maskmaterials and etchants recommended by DuPont. A polymer of the typeTeflon® AF1601S available from DuPont, is well adapted as a spin-onmaterial for depositing films as thin as one micron. A spin-onfluorocarbon polymer is preferably used when used in lieu of thestandard silicon-based passivation layers. This particular polymer has alow dielectric constant in the range of about 1.89 to 1.93. In thepresent application, the polymer can be deposited by spin-on techniquesto a thickness in the range between about 1 to 25 microns, andpreferably between 1 and 8 microns. The thickness of the spin-on polymeralso depends on whether the layer is utilized as a protective coating,or as a planarizing layer. Beyond a thickness of about 25 microns, thesignal attenuation becomes significant. As is well known, the spin-ontechnique for depositing materials on semiconductor wafers is carriedout in the “front end” of the fabrication process. The front end of asemiconductor processing facility is generally maintained in a cleanroom atmosphere which is highly controlled as to the temperature, thecleanliness in terms of particles per volume of room air, gaseouscomponents, etc.

[0040] There may be situations or applications in which the depositingof a fluorocarbon polymer by spin-on techniques is not efficient orpractical. It has been found that certain fluorocarbon polymers are welladapted as spray-on films. A polymer typically known as DuPont 954-100can be deposited to various thicknesses on the order of a hundredmicrons, as a carefully controlled spray. This polymer is particularlyapplicable as it provides an excellent and clear image. Other Teflon Sseries polymers supplied by DuPont may also be used. The fluorocarbonpolymer identified as type 958-203 exhibits a high gain, but may causebackground noise. The spray-on polymer can be applied to the chip as thephysical interface 30 and not to other areas of the chip by usingstandard spray coating techniques such as spray shields, masking tapes,and precision spray equipment. When using these techniques, an etchantfor the fluoropolymer is not needed. When masking is employed, maskingtape having an opening can be applied to the chip so that the polymercan be sprayed only on the area of the chip desired to be covered withthe polymer. When the chip is ready for curing, the tape can be removed.

[0041] The spray-on polymer can be applied over the physical interface30 at either the chip level or the wafer level. It is anticipated thatthin spray-on films can be formed with thicknesses in the range of about5 to several hundred microns, depending on the type of polymer used. Itis contemplated that a thickness in the range of about 8 to about 25microns would be desirable. Spray-on equipment adapted for use with theinvention may include pressurized spray equipment, nozzles and asuitable enclosure for preventing airborne particles from contaminatingthe spray-on process. The selection of a nozzle to achieve a desiredfilm thickness is well within the skill of those familiar with spraycoating techniques. Typically, a conveyor of a conventional type can beutilized to move the chips or wafers through the spray-on station, to acuring station. The spray-on polymer is cured by subjecting the wet filmto a dry air temperature for a suitable period of time. Thetime/temperature conditions for curing the wet film are preferably thosespecified by the manufacturer of the particular type of polymer used. Inthe event that the cured polymer film requires patterning, such materialcan be etched by conventional etchants.

[0042] The advantage of the spray-on technique is that such techniquecan be carried out in an atmosphere which is much less stringent thanthat required of many clean rooms. Indeed, a liquid fluorocarbon polymercan be sprayed on the physical interface 30 of the chip in conventionalroom environments. Another advantage of the spray-on polymer is that itis self planarizing and requires no additional processing to achieve asmooth outer surface. A smooth exterior surface of the physicalinterface 30 is required so that any peaks or valleys therein are notinterpreted as features in the object touching the physical interface30.

[0043] Post-fab clean room applications of the fluorocarbon polymer mayalso include the dispensing of a liquid droplet on the chip or wafer,dipping the chip in a pool of the liquid polymer, etc. Irrespective ofthe method of application, when the fluorocarbon polymer 32 is depositeddirectly over the fringing capacitor metal network, a thin dielectric isthe only layer of material separating the object touching the chip fromthe fringing capacitors which sense the contour of the object. It isthus apparent that with a thin dielectric layer of the polymer 32 andwith a low dielectric constant, a highly sensitive electrical interfaceis realized. In addition to the excellent electrical properties in thetouch-sensitive chip application, the fluorocarbon polymer is chip,crack and scratch resistant and is highly resistant to many chemicalstypically encountered in commercial and military uses.

[0044] In the event that those skilled in the art desire to maintain apassivation layer of silicon carbide and/or silicon nitride covering thechip, then such layer(s) can nevertheless be applied in a conventionalmanner on the chip in the area of the physical interface 30, and thenthe fluorocarbon polymer 32 deposited thereover. The advantages of thepolymer are not compromised by depositing the film over the traditionalpassivation layer(s). However, when a combination of a passivation layerand the polymer layer 32 is employed, the composite thickness of thelayers is increased, thus reducing the sensitivity of the device,especially when using fringing capacitor circuits. Preferably, thefluorocarbon polymer film 32 provides an excellent passivation layeritself, and thus when used without additional passivation layers, theoverall material thickness between the fringing capacitor structure andthe object touching the physical interface 30 is minimized. Optimalsensitivity is thus achieved by reducing the attenuation in thecapacitive coupling between the object and the fringing capacitorstructure. In addition, by eliminating the traditional passivationlayer(s), material costs are reduced, as are labor costs.

[0045] In accordance with another feature of the invention, afluorocarbon polymer can be employed to planarize various surfaces ofthe wafer during processing. It is believed that the polymers identifiedas DuPont AF 1106 and AF 2400 are well adapted as planarizing materialsthat can be used in accordance with standard semiconductor processingmethods. Other organic fluorocarbon polymers may be equally suitable foruse as planarizing materials. Rather than using the FOX material layer24, as shown in FIG. 1, for planarizing the layer in which the fringingcapacitor metal is formed, a polymer can be used in lieu thereof.Indeed, the standard FOX planarizing material can be replaced, as wellas the standard passivation layer(s), with one fluorocarbon polymerlayer.

[0046]FIG. 5 illustrates in cross section a small portion of asemiconductor wafer where the standard material layers noted above havebeen replaced with a single a layer of an organic polymer 40. Here, thepolymer layer 40 is deposited over the patterned metal layer 10 so as toplanarize the surface and make it smooth and featureless. It is notedthat a sufficient thickness of the polymer 40 is deposited so that anupper portion of the polymer functions as a passivation layer to themetal layer 10. It is anticipated that a total thickness of the polymerlayer 40 may be in the range of about 7 microns. It is realized that thethickness of the polymer layer 40 is a function of the thickness of themetal layer 10. Metal layers typically functioning as fringingcapacitors are about 2 microns thick. Preferably, the thickness of thepolymer 40 located above the metal pattern 10 is about 5 microns.

[0047] As noted above, the organic fluorocarbon family of polymers arenot only well adapted for semiconductor processes, but such polymers areself planarizing. This means that no other processes are necessary toachieve a planarized top surface. Whether the fluorocarbon polymer isspun or sprayed on the wafer surface, such material is initially inliquid form and thus sets with a smooth top surface. After a smoothsurface is set into the organic material, the polymer is soft baked inthe manner described above.

[0048] The structure shown in FIG. 5 lends itself well to an efficientand low cost physical interface 30 that is thin, mechanically durable,compliant, and resistant to chemicals. The small distance between thetop surface of the polymer 40 and the underlying capacitor metal network10 provides low attenuation for the coupling of the electric fieldbetween the object and the fringing capacitor. The low attenuation ofthe electric field and the low dielectric constant exhibited by thefluorocarbon polymer make an excellent combination of properties for ahigh sensitivity capacitor sensor.

[0049] With reference now to FIG. 6, there is shown the wafer of FIG. 5,but with a gettering agent 42 disposed in the surface of the polymerphysical interface 40. Preferably, the gettering agent 42 can beelectrons or other ions suitable for immobilizing or pinning deleteriousions. Phosphorus can be implanted to getter sodium ions. The getterelectrons or ions can be implanted into the surface of the polymer 40 byconventional ion implant equipment. The depth to which the electrons orions are disposed under the surface of the polymer 40 is a function ofthe energy with which the electrons or ions are driven into the polymer40. Electron implantation into polymers for use as microphones isdisclosed in the publication entitled “A Micromachined Thin-film TeflonElectret Microphone”, by Hsieh et. al., presented at Nepcon West,February 1999, Anaheim Calif. The disclosure of this publication isincorporated herein by reference.

[0050] In the event that the gettering agent 42 is to be selectivelyimplanted at desired locations in the polymer 40, then an implant mask,such as a physical block or photoresist material, can be used. Themasking material can be deposited by conventional means on the surfaceof the wafer and patterned to open areas where the getter is to beimplanted. In the masked areas of the wafer, the getter will notpenetrate therethrough and thus will not be deposited in the underlyingpolymer 40.

[0051] In integrated circuits of the type which involve the use ofelectric fields, such as the fringing capacitor type employed withtouch-sensitive chips, the selection of materials, the shape andconfiguration of the materials, and other parameters are importantconsiderations. The principle of operation of the touch-sensitive chipis directly related to the nature of electric fields between the objectand the sensor circuit which comprises the fringing capacitor network.As noted above, the type of dielectric, thickness thereof and otherphysical properties determine the nature of the electric field. Invarious types of sensors adapted to sense fingerprints, the dielectricdifferences between the ridges and valleys of the fingerprint producecorresponding variations in the electric fields, and thus influence theunderlying fringing capacitor network. The strength or intensity of theelectric field is sensed by the sensor capacitors and is converted todigital form for use in subsequent processing to reproduce thefingerprint pattern, or compare the same with one or more referenceprints.

[0052] In accordance with another feature of the invention, thefluorocarbon polymer is well adapted for selective implant to modify orotherwise influence the characteristics of the electric field thatexists between the object and the underlying circuit. FIG. 7 illustratesan embodiment of the invention where a fluorocarbon protective layer 50has been deposited over the conventional silicon nitride layer 26 andsilicon carbide layer 28. As noted above, this combination alone allowsthe two silicon-based layers 26 and 28 to be made thinner than inconventional practices. Implanted or otherwise deposited in the polymerlayer 50 is an accumulation of particles 52, including electrons, ionsor other matter that are capable of influencing an electric field. Inthe preferred embodiment, the particles 52 are implanted with an energyand dosage suitable to achieve a concentration that influences theelectric field in the manner desired, it being realized that particlesof various polarizations and concentrations will affect the electricfield in different ways.

[0053]FIG. 7 also illustrates that the particles 52 are selectivelydeposited in the polymer 50 so that the concentration of the particles52 varies from one location to another. Here, the concentration of theparticles 52 is much higher in the location overlying the metal path 54,than in other regions in the polymer 50. The selective deposition of theparticles, whether they be electrons, ions or other matter, can beachieved by forming a mask over the wafer, such as a photoresist typemask, and patterning the mask to open an area over the metal path 54.When the wafer is subjected to the implant operation, the particles willpass through the opening into the exposed polymer. In the other areas ofthe polymer that are covered with the mask material, the particles willnot pass through the mask and thus the underlying polymer will not beimplanted. Various other mask materials can be used for different typesof particles and processes of deposition other than implant techniques.Indeed, various masking steps may be carried out in a sequence such thatsome areas can be implanted at different depths as compared to otherareas, and/or implanted with different concentrations or types ofparticles.

[0054] By utilizing particles embedded in the polymer 50, the electricfield can be influenced in the manner desired. The electric field can bemade to be more sensitive in some areas, and less sensitive in otherareas. In those circuit areas where the electric field is to beminimized, then the overlying polymer area can be implanted with thetype of particle that tends to cancel the electric field at thatlocation. The electric field can, on the other hand, be made toaccentuate the electric field in areas by embedding particles thatachieve an enhancement of the electric field. In addition to theinfluence of the electric field, the particles can also function togetter deleterious ions, as noted above.

[0055]FIG. 8 illustrates a semiconductor structure much like that shownin FIG. 5, with an electric field 56 that may be characteristic of sucha structure. It is realized that the shape of the electric field 56 isonly representative, it being realized that the actual shape would bemuch more complex. In any event, the electric field 56 that existsbetween the object and the capacitor sensor circuits is of a specifiedshape, and affects the sensor circuits accordingly. When the polymer 40is implanted with particles 58 as shown in FIG. 9, the electric field 60is influenced such that the shape thereof is different from that shownin FIG. 8. When different areas in the polymer 40 have particlesembedded therein, the interaction of the respective electric fieldsthemselves will produce an effective field that is different from theindividual fields. Those skilled in the art can determine byexperimentation the areas of the wafer and particle dosages and typesthat are necessary to achieve the desired influence on the electricfields.

[0056] The quality of the image, in terms of contrast, of atouch-sensitive chip is proportional to the amount of moisture on theskin of the person's finger touching the physical interface. The higherthe moisture content, the higher the image contrast between ridges andvalleys. The image of a wet fingerprint is darker in contrast than a dryfingerprint. This is shown in FIGS. 10a and 10 b, where the person'sfinger in FIG. 10a is moist and in FIG. 10b the person's finger is dry.Excessive moisture and/or oils can interfere with the imaging of afingerprint, in that such liquids can pool in the valleys between theridges of the fingerprint and degrade the contrast between uniquefeatures of the fingerprint. Excessive moisture and/or oils on aperson's finger can also leave a residue on the physical interface thatcontributes to ghosting during the imaging process. It can be seen thatthe moisture level of skin can thus be correlated with the level ofcontrast of the image. An algorithm can be developed that could thusmeasure the skin moisture content. It may also look at other areas ofskin, other than the fingertip, to determine if there is moresensitivity on the palm, nose, or arm etc. It may then be useful todiagnose moisture levels for hand treatment. And, if sufficientlysensitive, the system could measure such things as dehydration levelsfor medical diagnosis, or diagnose other dermatological problems.

[0057] Fingerprint readers in general, and the touch-sensitive chips inparticular, have problems converting very moist fingers to correspondingimages. The problem is that moisture from the finger directly overdrivesthe image, making it easier to leave a latent print. A “latent print” isa residual of the image after the finger is removed form the physicalinterface 30. The sensitivity of the latent fingerprint is a function ofthe material and surface states remaining on the interface surface ofthe sensor.

[0058] Many touch-sensitive chips exhibit a hypersensitivity to residue,such as soap and hand lotion, that remains on the surface of thephysical interface after the person's finger is removed therefrom.Sensors in general can become overly sensitive to residual moisture andoils. In extreme cases of hypersensitivity, the circuits are unable tocapture a usable image.

[0059] In practice, it has been found that the use of a fluorocarbonpolymer physical interface does not exhibit this hypersensitivity. Anexample can be seen in FIGS. 11a and 11 b. FIG. 11a illustrates thelatency of a fingerprint on a physical interface constructed accordingto the prior art. Before any fingerprint was applied to the physicalinterface, the sensor circuits provided an image of a monotonic greyimage. After a fingerprint was applied to the physical interface, andremoved, the residual fingerprint that was effectively sensed was thatshown in FIG. 11a.

[0060] In contrast, when the physical interface is constructed with afluorocarbon polymer, the background of the “image” sensed by the sensorcircuits, after touching by a person's finger, was characterized asrandom species. No residual print was sensed. This feature of theinvention facilitates the high resolution imaging of objects applied tothe physical interface.

[0061] It is believed that the substantial reduction in latency offingerprints on the fluorocarbon polymer is related to its hydrophobicand oleophobic characteristics. It is known that the presence ofpolarized liquids, such as moisture, skin oils, hand lotion, etc., canfill the valleys between the ridges of fingerprint. Hydrophobic andoleophobic surfaces, such as the surface of a fluorocarbon polymer,ficilitate the dispersion of such liquids from the valleys and therebyreduce or eliminate the adverse latency effects. The surface of thefluorocarbon polymer aids in the removal of the moisture between theridges of het fingerprint by way of capillary action. The problem of“wet finger” is thus reduced substantially.

[0062] In any of the embodiments described above, those skilled in theart may use various means to protect the touch-sensitive chip againstdamage or destruction by electrostatic discharge currents and voltages.Various metal ESD grids and patterns can be formed around the peripheryof the sensor capacitor matrix, and connected to ground. With thisarrangement, static electric discharges from objects to the ESD gridwill be carried to ground rather than through the capacitive sensingcircuits.

[0063] Disclosed herein are a number of embodiments of the inventionwhere a fluorocarbon polymer can be employed with integrated circuits toprovide a robust physical interface thereto. The polymer can be used inaddition to conventional passivation layers, or in replacement thereof.Moreover, the polymer can have particles embedded therein over theentire area, or in selected areas to provide a getter agent fordeleterious ions, or to influence the electric field, or both.

[0064] Although the preferred and other embodiments have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made therein without departing from the spiritand scope of the invention, as defined by the appended claims.

What is claimed is:
 1. A method for fabricating a semiconductor device,comprising the steps of: forming a transistor circuit in a semiconductormaterial of the device, said transistor circuit being responsive to anelectric field; forming a fluorocarbon polymer over at least a portionof said transistor circuit so that said electric field passes throughsaid fluorocarbon polymer; and embedding a particle in said fluorocarbonpolymer to influence the electric field.
 2. The method of claim 1,further including embedding a plurality of particles of a type forinfluencing the electric field.
 3. The method of claim 1, furtherincluding embedding electrons in said fluorocarbon polymer.
 4. Themethod of claim 1, further including embedding particles in saidfluorocarbon polymer at desired locations, and in other locations ofsaid fluorocarbon polymer embedding no particles.
 5. The method of claim4, further including using a mask to selective embed the particles insaid fluorocarbon polymer.
 6. The method of claim 1, further includingembedding particles in said fluorocarbon polymer using implanttechniques.
 7. The method of claim 1, further including formingcapacitor plates on said semiconductor material, and using saidfluorocarbon polymer as a dielectric with a dielectric constant lessthan about 2.1.
 8. The method of claim 1, wherein said transistorcircuit includes a capacitor plate to which said electric field iscoupled.
 9. The method of claim 8, further including forming saidfluorocarbon polymer over said capacitor plate.
 10. The method of claim8, further including embedding the particles in said fluorocarbonpolymer at a location to influence the electric field coupled to saidcapacitor plate.
 11. The method of claim 1, further including embeddingparticles of a type for gettering the fluorocarbon polymer to preventdeleterious ions from migrating to said sensor circuits.
 12. Asemiconductor device fabricated according to the method of claim
 1. 13.A method for fabricating a semiconductor device, comprising the stepsof: forming in a semiconductor material a matrix of sensor circuits forprocessing signals generated by capacitive circuits; forming a matrix ofsaid capacitive circuits on said semiconductor material, each saidcapacitive circuit having at least one conductive plate, each saidcapacitive circuit coupled to a respective said sensor circuit; forminga dielectric layer overlying said capacitive circuits by depositing alayer of a fluorocarbon polymer; and embedding particles in saiddielectric layer to influence an electric field coupled to ones of saidcapacitive circuits.
 14. The method of claim 13, further including usinga fluorocarbon polymer with a dielectric constant of less than about2.1.
 15. The method of claim 13, further including using a mask toselectively implant the particles in said fluorocarbon polymer.
 16. Themethod of claim 13, further including forming said dielectric layer byspraying said fluorocarbon polymer on said semiconductor device.
 17. Themethod of claim 13, further including forming said dielectric layer witha thickness of about 20 microns.
 18. The method of claim 13, furtherincluding forming said capacitive circuits so as to be responsive toridges and valleys of a fingerprint.
 19. The method of claim 18, furtherincluding forming a physical interface in said semiconductor device forallowing a touch input to said capacitive circuits.
 20. The method ofclaim 19, further including forming said dielectric layer with onesurface thereof exposed to the environment.
 21. A semiconductor deviceconstructed according to the method of claim 13.